MOSAID's development of a 256Gb flash memory device that operates at up to 800MBps per channel is said to allow the design of solid state drives with gigabyte per second performance and terabyte-class capacity.

The 256Gb HLNAND2 device has an interface speed closely matched to PCI Express generations 2 and 3,  and its simultaneous DDR800 read and write speed gives an effective 1600MBs throughput.

The device combines eight standard NAND flash chips and a proprietary ASIC interface chip.

"We are very excited to be the first company to produce a NAND Flash device that delivers DDR800 performance," said Jin-Ki Kim, MOSAID's vice president of R&D. "The 256Gb HLNAND2 device is optimized for a wide range of Flash storage applications that require high performance and scalability. We believe that HLNAND2 provides the industry's most cost-effective solution for Flash storage applications requiring both high performance and memory capacity."

The device will be manufactured by Winpac in Korea.